IRFBG20PBF
Üretici:
Vishay Silikonix
Açıklama:
MOSFET N-CH 1000V 1.4A TO220AB
Kategoriler:
Ayrık Yarı İletken Ürünler
Özellikler
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Özelliği:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Çalışma sıcaklığı:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Maks) @ Vgs:
38 nC @ 10 V
Rds Açık (Maks) @ Id, Vgs:
11Ohm @ 840mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
1000 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
500 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220AB
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
1.4A (Tc)
Power Dissipation (Max):
54W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRFBG20
Tanıtım
N-Kanal 1000 V 1.4A (Tc) 54W (Tc) TO-220AB deliğinden
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| resim | parça # | Açıklama | |
|---|---|---|---|
|
|
2N7002E-T1-E3 |
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|
|
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SI7148DP-T1-E3 |
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SI7157DP-T1-GE3 |
MOSFET P-CH 20V 60A PPAK SO-8
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|
|
IRFP21N60LPBF |
MOSFET N-CH 600V 21A TO247-3
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|
SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
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|
SIR873DP-T1-GE3 |
MOSFET P-CH 150V 37A PPAK SO-8
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|
|
|
SIJ478DP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
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|
SUD50N04-8M8P-4GE3 |
MOSFET N-CH 40V 14A/50A TO252
|
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|
SISA72DN-T1-GE3 |
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|
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