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SIJ478DP-T1-GE3

Üretici:
Vishay Silikonix
Açıklama:
MOSFET N-CH 80V 60A PPAK SO-8
Kategoriler:
Ayrık Yarı İletken Ürünler
Özellikler
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.6V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs:
54 nC @ 10 V
Rds On (Max) @ Id, Vgs:
8mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1855 pF @ 40 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
PowerPAK® SO-8
Mfr:
Vishay Siliconix
Akım - Sürekli Tahliye (Id) @ 25°C:
60A (Tc)
Power Dissipation (Max):
5W (Ta), 62.5W (Tc)
Teknoloji:
MOSFET (Metal Oksit)
Base Product Number:
SIJ478
Tanıtım
N-Kanal 80 V 60A (Tc) 5W (Ta), 62.5W (Tc) Yüzey Montajı PowerPAK® SO-8
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