SQJ431AEP-T1_GE3
Üretici:
Vishay Silikonix
Açıklama:
MOSFET P-CH 200V 9.4A PPAK SO-8
Kategoriler:
Ayrık Yarı İletken Ürünler
Özellikler
Kategoriler:
Ayrık Yarı İletken Ürünler Transistörler FET'ler, MOSFET'ler Tekli FET'ler, MOSFET'l
FET Feature:
-
Vgs(th) (Maks) @ Kimlik:
3.5V @ 250μA
Operating Temperature:
-55°C ~ 175°C (TJ)
Paket / Çanta:
PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs:
85 nC @ 10 V
Rds Açık (Maks) @ Id, Vgs:
305mOhm @ 3.8A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
3700 pF @ 25 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101, TrenchFET®
Supplier Device Package:
PowerPAK® SO-8
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
9.4A (Tc)
Power Dissipation (Max):
68W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SQJ431
Tanıtım
P-Kanal 200 V 9.4A (Tc) 68W (Tc) Yüzey Montajı PowerPAK® SO-8
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| resim | parça # | Açıklama | |
|---|---|---|---|
|
|
2N7002E-T1-E3 |
MOSFET N-CH 60V 240MA SOT23-3
|
|
|
|
SIR872ADP-T1-RE3 |
MOSFET N-CH 150V 53.7A PPAK SO-8
|
|
|
|
SI7148DP-T1-E3 |
MOSFET N-CH 75V 28A PPAK SO-8
|
|
|
|
SI7157DP-T1-GE3 |
MOSFET P-CH 20V 60A PPAK SO-8
|
|
|
|
IRFP21N60LPBF |
MOSFET N-CH 600V 21A TO247-3
|
|
|
|
SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SIR873DP-T1-GE3 |
MOSFET P-CH 150V 37A PPAK SO-8
|
|
|
|
SIJ478DP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SUD50N04-8M8P-4GE3 |
MOSFET N-CH 40V 14A/50A TO252
|
|
|
|
SISA72DN-T1-GE3 |
MOSFET N-CH 40V 60A PPAK1212-8
|
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