SI4447DY-T1-GE3
Üretici:
Vishay Silikonix
Açıklama:
MOSFET P-CH 40V 3.3A 8SO
Kategoriler:
Ayrık Yarı İletken Ürünler
Özellikler
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs:
14 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
72mOhm @ 4.5A, 15V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V, 10V
Paket:
Teyp ve rulo (TR)
Kesme bantı (CT)
Digi-Reel®
Kaynak Voltajına Tahliye (Vdss):
40V
Vgs (Max):
±16V
Ürün Durumu:
Aktif
Input Capacitance (Ciss) (Max) @ Vds:
805 pF @ 20 V
Montaj Tipi:
Yüzey Montajı
Series:
TrenchFET®
Supplier Device Package:
8-SOIC
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
3.3A (Ta)
Power Dissipation (Max):
1.1W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI4447
Tanıtım
P-Kanal 40 V 3.3A (Ta) 1.1W (Ta) Yüzey Montajı 8-SOIC
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| resim | parça # | Açıklama | |
|---|---|---|---|
|
|
2N7002E-T1-E3 |
MOSFET N-CH 60V 240MA SOT23-3
|
|
|
|
SIR872ADP-T1-RE3 |
MOSFET N-CH 150V 53.7A PPAK SO-8
|
|
|
|
SI7148DP-T1-E3 |
MOSFET N-CH 75V 28A PPAK SO-8
|
|
|
|
SI7157DP-T1-GE3 |
MOSFET P-CH 20V 60A PPAK SO-8
|
|
|
|
IRFP21N60LPBF |
MOSFET N-CH 600V 21A TO247-3
|
|
|
|
SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SIR873DP-T1-GE3 |
MOSFET P-CH 150V 37A PPAK SO-8
|
|
|
|
SIJ478DP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SUD50N04-8M8P-4GE3 |
MOSFET N-CH 40V 14A/50A TO252
|
|
|
|
SISA72DN-T1-GE3 |
MOSFET N-CH 40V 60A PPAK1212-8
|
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