SI2308CDS-T1-GE3
Üretici:
Vishay Silikonix
Açıklama:
MOSFET N-CH 60V 2.6A SOT23-3
Kategoriler:
Ayrık Yarı İletken Ürünler
Özellikler
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
4 nC @ 10 V
Rds Açık (Maks) @ Id, Vgs:
144mOhm @ 1.9A, 10V
FET Type:
N-Channel
Sürücü Gerilimi (Maks Rds Açık, Min Rds Açık):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Kaynak Voltajına Tahliye (Vdss):
60V
Vgs (Max):
±20V
Ürün Durumu:
Aktif
Input Capacitance (Ciss) (Max) @ Vds:
105 pF @ 30 V
Mounting Type:
Surface Mount
Series:
TrenchFET® Gen IV
Supplier Device Package:
SOT-23-3 (TO-236)
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
2.6A (Tc)
Power Dissipation (Max):
1.6W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI2308
Tanıtım
N-Kanal 60 V 2.6A (Tc) 1.6W (Tc) Yüzey Montajı SOT-23-3 (TO-236)
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| resim | parça # | Açıklama | |
|---|---|---|---|
|
|
2N7002E-T1-E3 |
MOSFET N-CH 60V 240MA SOT23-3
|
|
|
|
SIR872ADP-T1-RE3 |
MOSFET N-CH 150V 53.7A PPAK SO-8
|
|
|
|
SI7148DP-T1-E3 |
MOSFET N-CH 75V 28A PPAK SO-8
|
|
|
|
SI7157DP-T1-GE3 |
MOSFET P-CH 20V 60A PPAK SO-8
|
|
|
|
IRFP21N60LPBF |
MOSFET N-CH 600V 21A TO247-3
|
|
|
|
SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SIR873DP-T1-GE3 |
MOSFET P-CH 150V 37A PPAK SO-8
|
|
|
|
SIJ478DP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SUD50N04-8M8P-4GE3 |
MOSFET N-CH 40V 14A/50A TO252
|
|
|
|
SISA72DN-T1-GE3 |
MOSFET N-CH 40V 60A PPAK1212-8
|
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