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SI7454DDP-T1-GE3

Üretici:
Vishay Silikonix
Açıklama:
MOSFET N-CH 100V 21A PPAK SO-8
Kategoriler:
Ayrık Yarı İletken Ürünler
Özellikler
Kategoriler:
Ayrık Yarı İletken Ürünler Transistörler FET'ler, MOSFET'ler Tekli FET'ler, MOSFET'l
FET Feature:
-
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs:
19.5 nC @ 10 V
Rds On (Max) @ Id, Vgs:
33mOhm @ 10A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
550 pF @ 50 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
PowerPAK® SO-8
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
21A (Tc)
Power Dissipation (Max):
4.1W (Ta), 29.7W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI7454
Tanıtım
N-Kanal 100 V 21A (Tc) 4.1W (Ta), 29.7W (Tc) Yüzey Montajı PowerPAK® SO-8
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