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SIR800DP-T1-GE3

Üretici:
Vishay Silikonix
Açıklama:
MOSFET N-CH 20V 50A PPAK SO-8
Kategoriler:
Ayrık Yarı İletken Ürünler
Özellikler
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Özelliği:
-
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Paket / Çanta:
PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs:
133 nC @ 10 V
Rds Açık (Maks) @ Id, Vgs:
2,3mOhm @ 15A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 10V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±12V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
5125 pF @ 10 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
PowerPAK® SO-8
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
Power Dissipation (Max):
5.2W (Ta), 69W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIR800
Tanıtım
N-Kanal 20 V 50A (Tc) 5.2W (Ta), 69W (Tc) Yüzey Montajı PowerPAK® SO-8
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