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SIB452DK-T1-GE3

Üretici:
Vishay Silikonix
Açıklama:
MOSFET N-CH 190V 1.5A PPAK SC75
Kategoriler:
Ayrık Yarı İletken Ürünler
Özellikler
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® SC-75-6
Gate Charge (Qg) (Max) @ Vgs:
6.5 nC @ 10 V
Rds On (Max) @ Id, Vgs:
2.4Ohm @ 500mA, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
190 V
Vgs (Max):
±16V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
135 pF @ 50 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
PowerPAK® SC-75-6
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
1.5A (Tc)
Power Dissipation (Max):
2.4W (Ta), 13W (Tc)
Technology:
MOSFET (Metal Oxide)
Temel Ürün numarası:
SIB452
Tanıtım
N-Kanal 190 V 1.5A (Tc) 2.4W (Ta), 13W (Tc) Yüzey Montajı PowerPAK® SC-75-6
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