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SISA14DN-T1-GE3

Üretici:
Vishay Silikonix
Açıklama:
MOSFET N-CH 30V 20A PPAK1212-8
Kategoriler:
Ayrık Yarı İletken Ürünler
Özellikler
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs:
29 nC @ 10 V
Rds On (Max) @ Id, Vgs:
5.1mOhm @ 10A, 10V
FET Tipi:
N-Kanal
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Paket:
Teyp ve rulo (TR) Kesme bantı (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
30 V
Vgs (Maks.):
+20V, -16V
Product Status:
Active
Giriş Kapasitesi (Ciss) (Maks) @ Vds:
1450pF @ 15V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
PowerPAK® 1212-8
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Power Dissipation (Max):
3.57W (Ta), 26.5W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SISA14
Tanıtım
N-Kanal 30 V 20A (Tc) 3.57W (Ta), 26.5W (Tc) Yüzey Montajı PowerPAK® 1212-8
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