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SI4425DDY-T1-GE3

Üretici:
Vishay Silikonix
Açıklama:
MOSFET P-CH 30V 19.7A 8SO
Kategoriler:
Ayrık Yarı İletken Ürünler
Özellikler
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs:
80 nC @ 10 V
Rds On (Max) @ Id, Vgs:
9.8mOhm @ 13A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
30 V
Vgs (Maks.):
±20V
Product Status:
Active
Giriş Kapasitesi (Ciss) (Maks) @ Vds:
2610pF @ 15V
Mounting Type:
Surface Mount
Seriler:
TrenchFET®
Supplier Device Package:
8-SOIC
Mfr:
Vishay Silikonix
Current - Continuous Drain (Id) @ 25°C:
19.7A (Tc)
Power Dissipation (Max):
2.5W (Ta), 5.7W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI4425
Tanıtım
P-Kanal 30 V 19.7A (Tc) 2.5W (Ta), 5.7W (Tc) Yüzey Montajı 8-SOIC
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