SQM120P10_10M1LGE3

Üretici:
Vishay Silikonix
Açıklama:
MOSFET P-CH 100V 120A TO263
Kategoriler:
Ayrık Yarı İletken Ürünler
Özellikler
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Maks) @ Vgs:
190 nC @ 10 V
Rds On (Max) @ Id, Vgs:
10.1mOhm @ 30A, 10V
FET Tipi:
P-Kanal
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Paket:
Teyp ve rulo (TR) Kesme bantı (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
100 V
Vgs (Maks.):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
9000 pF @ 25 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101, TrenchFET®
Supplier Device Package:
TO-263 (D²Pak)
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Power Dissipation (Max):
375W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SQM120
Tanıtım
P-Kanal 100 V 120A (Tc) 375W (Tc) Yüzey Taşıma TO-263 (D2Pak)
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