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SIRA80DP-T1-RE3

Üretici:
Vishay Silikonix
Açıklama:
MOSFET N-CH 30V 100A PPAK SO-8
Kategoriler:
Ayrık Yarı İletken Ürünler
Özellikler
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Paket / Çanta:
PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs:
188 nC @ 10 V
Rds Açık (Maks) @ Id, Vgs:
0,62mOhm @ 20A, 10V
FET Type:
N-Channel
Sürücü Gerilimi (Maks Rds Açık, Min Rds Açık):
4.5V, 10V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Kaynak Voltajına Tahliye (Vdss):
30 volt
Vgs (Max):
+20V, -16V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
9530 pF @ 15 V
Mounting Type:
Surface Mount
Series:
TrenchFET® Gen IV
Supplier Device Package:
PowerPAK® SO-8
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Power Dissipation (Max):
104W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIRA80
Tanıtım
N-Kanal 30 V 100A (Tc) 104W (Tc) Yüzey Montajı PowerPAK® SO-8
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