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SIRA12DP-T1-GE3

Üretici:
Vishay Silikonix
Açıklama:
MOSFET N-CH 30V 25A PPAK SO-8
Kategoriler:
Ayrık Yarı İletken Ürünler
Özellikler
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs:
45 nC @ 10 V
Rds On (Max) @ Id, Vgs:
4.3mOhm @ 10A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
+20V, -16V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2070 pF @ 15 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
PowerPAK® SO-8
Mfr:
Vishay Silikonix
Current - Continuous Drain (Id) @ 25°C:
25A (Tc)
Güç Tüketimi (Maks.):
4,5W (Ta), 31W (Tc)
Technology:
MOSFET (Metal Oxide)
Temel Ürün numarası:
SIRA12
Tanıtım
N-Kanal 30 V 25A (Tc) 4.5W (Ta), 31W (Tc) Yüzey Montajı PowerPAK® SO-8
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