SCT3120ALGC11
Üretici:
Rohm Yarım iletken
Açıklama:
SICFET N-CH 650V 21A TO247N
Kategoriler:
Ayrık Yarı İletken Ürünler
Özellikler
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5.6V @ 3.33mA
Operating Temperature:
175°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
38 nC @ 18 V
Rds On (Max) @ Id, Vgs:
156mOhm @ 6.7A, 18V
FET Tipi:
N-Kanal
Drive Voltage (Max Rds On, Min Rds On):
18V
Paket:
Tüp
Drain to Source Voltage (Vdss):
650 V
Vgs (Maks.):
+22V, -4V
Product Status:
Active
Giriş Kapasitesi (Ciss) (Maks) @ Vds:
460 pF @ 500 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247N
Mfr:
Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C:
21A (Tc)
Power Dissipation (Max):
103W (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
SCT3120
Tanıtım
N-Kanal 650 V 21A (Tc) 103W (Tc) TO-247N deliğinden
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RUM003N02T2L |
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|
RD3P130SPTL1 |
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|
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|
|
RD3H200SNTL1 |
MOSFET N-CH 45V 20A TO252
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RSR025N05TL |
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RD3P050SNTL1 |
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