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RQ3L090GNTB

Üretici:
Rohm Yarım iletken
Açıklama:
MOSFET N-CH 60V 9A/30A 8HSMT
Kategoriler:
Ayrık Yarı İletken Ürünler
Özellikler
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Özelliği:
-
Vgs(th) (Max) @ Id:
2.7V @ 300µA
Çalışma sıcaklığı:
150°C (TJ)
Package / Case:
8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs:
24.5 nC @ 10 V
Rds On (Max) @ Id, Vgs:
13.9mOhm @ 9A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1260 pF @ 30 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-HSMT (3.2x3)
Mfr:
Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C:
9A (Ta), 30A (Tc)
Power Dissipation (Max):
2W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
RQ3L090
Tanıtım
N-Kanal 60 V 9A (Ta), 30A (Tc) 2W (Ta) Yüzey Taşıma 8-HSMT (3.2x3)
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