IXFX180N10
Üretici:
IXYS
Açıklama:
MOSFET N-CH 100V 180A PLUS247
Kategoriler:
Ayrık Yarı İletken Ürünler
Özellikler
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 8mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3 Variant
Gate Charge (Qg) (Max) @ Vgs:
390 nC @ 10 V
Rds On (Max) @ Id, Vgs:
8mOhm @ 90A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Paket:
Tüp
Drain to Source Voltage (Vdss):
100 V
Vgs (Maks.):
±20V
Product Status:
Not For New Designs
Giriş Kapasitesi (Ciss) (Maks) @ Vds:
10900 pF @ 25 V
Mounting Type:
Through Hole
Seriler:
HiPerFET™
Supplier Device Package:
PLUS247™-3
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
180A (Tc)
Power Dissipation (Max):
560W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFX180
Tanıtım
N-Kanal 100 V 180A (Tc) 560W (Tc) Delikten PLUS247TM-3
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| resim | parça # | Açıklama | |
|---|---|---|---|
|
|
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|
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IXFH12N90 |
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|
IXFH13N50 |
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|
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|
IXFN32N120P |
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IXFN32N100Q3 |
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|
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