FQP85N06
Özellikler
Kategoriler:
Ayrık Yarı İletken Ürünler Transistörler FET'ler, MOSFET'ler Tekli FET'ler, MOSFET'l
FET Feature:
-
Vgs(th) (Maks) @ Kimlik:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
112 nC @ 10 V
Rds On (Max) @ Id, Vgs:
10mOhm @ 42.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±25V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
4120 pF @ 25 V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-220-3
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
85A (Tc)
Power Dissipation (Max):
160W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQP85
Tanıtım
N-Kanal 60 V 85A (Tc) 160W (Tc) TO-220-3 deliğinden
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