FQA8N100C
Üretici:
Birinci sınıf
Açıklama:
MOSFET N-CH 1000V 8A TO3PN
Kategoriler:
Ayrık Yarı İletken Ürünler
Özellikler
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Özelliği:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Çalışma sıcaklığı:
-55°C ~ 150°C (TJ)
Package / Case:
TO-3P-3, SC-65-3
Gate Charge (Qg) (Maks) @ Vgs:
70 nC @ 10 V
Rds On (Max) @ Id, Vgs:
1.45Ohm @ 4A, 10V
FET Tipi:
N-Kanal
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
1000 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
3220 pF @ 25 V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-3PN
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
8A (Tc)
Power Dissipation (Max):
225W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQA8
Tanıtım
N-Kanal 1000 V 8A (Tc) 225W (Tc) TO-3PN deliğinden
RFQ gönder
stok:
Adedi: