IXFA4N100Q
Üretici:
IXYS
Açıklama:
MOSFET N-CH 1000V 4A TO263
Kategoriler:
Ayrık Yarı İletken Ürünler
Özellikler
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.5V @ 1.5mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
39 nC @ 10 V
Rds Açık (Maks) @ Id, Vgs:
3 Ohm @ 2A, 10V
FET Type:
N-Channel
Sürücü Gerilimi (Maks Rds Açık, Min Rds Açık):
10V
Package:
Tube
Kaynak Voltajına Tahliye (Vdss):
1000 V
Vgs (Max):
±20V
Ürün Durumu:
Aktif
Input Capacitance (Ciss) (Max) @ Vds:
1050 pF @ 25 V
Mounting Type:
Surface Mount
Series:
HiPerFET™, Q Class
Supplier Device Package:
TO-263AA (IXFA)
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
Power Dissipation (Max):
150W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFA4N100
Tanıtım
N-Kanal 1000 V 4A (Tc) 150W (Tc) Yüzey Taşıma TO-263AA (IXFA)
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| resim | parça # | Açıklama | |
|---|---|---|---|
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|
IXFK120N20 |
MOSFET N-CH 200V 120A TO-264AA
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|
IXFK27N80 |
MOSFET N-CH 800V 27A TO264AA
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IXFH20N80Q |
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IXFH26N50Q |
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IXFH12N90 |
MOSFET N-CH 900V 12A TO247AD
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|
IXFH13N50 |
MOSFET N-CH 500V 13A TO247AD
|
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|
IXFN32N120P |
MOSFET N-CH 1200V 32A SOT-227B
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|
IXFN32N100Q3 |
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IXFN36N100 |
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|
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